Key relationship
C=κε₀A/d; Q=CV.
Physics · Class 12
Increase area or permittivity to store more charge per volt. Increase gap to reduce capacitance. Connected and isolated cases obey different charge constraints.
Open the interactive experiment →தட்டு பரப்பும் மின்காப்பு மாறிலியும் அதிகரித்தால் தேக்கத்திறன் அதிகரிக்கும். இடைவெளி அதிகரித்தால் குறையும்.
C=κε₀A/d; Q=CV.
Increase area or permittivity to store more charge per volt. Increase gap to reduce capacitance. Connected and isolated cases obey different charge constraints.
Capacitance describes geometry and dielectric material. The relation Q = CV does not make C increase just because V increases.
Parallel plates with area large compared with gap²; homogeneous dielectric and negligible fringing.
Use the controls and plotted relation to explain parallel-plate capacitance.
Try both scenarios, change one control, and predict the result before checking the graph and readouts.
Change one input while keeping the others fixed, as you would in a controlled experiment.
For A=100 cm², d=1 mm and κ=4, C≈0.354 nF.
The model connects parallel-plate capacitance with an observable reading. Check the equation and assumptions before applying it.
SI units · algebra · graph reading
Doubling the plate gap while all other geometry is fixed does what to C?
It halves the capacitance.
Course connection: Class XII Chapter 2. Consult the roadmap for CBSE, NEET, JEE Main and Advanced scope.